2SB1568
Transistors
Rev.A
1/3
Power Transistor (
-
80V,
-
4A)
2SB1568
Features
1) Available in TO-220 FN package
2) Darling connection provides high
dc current gain (h
FE
)
3) Damper diode is incorporated
4) Built in resistors between base and
emitter
5) Two millimeters lower than TO-220 FP
which allows higher density mounting
6) Complementary pair with 2SD2399
Applications
Power amplifler
External dimensions (Unit : mm)
ROHM : TO-220FN
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Sourse)
4.5
2.8
0.75
3.2
(2) (3)
(1)
0.8
2.54
2.6
2.54
1.3
1.2
14.0
12.0
8.0
5.0
10.0
15.0
Absolute maximum rating (Ta=25
C) Equivalent circuit
C
B
E
B
C
E
: Base
: Collector
: Emitter
R
1
R
2
R
1
3k
=
:
=
:
R
2
300
Parameter
Symbol
V
CBO
V
CEO
2
-
6
P
C
Tstg
Limits
-
80
-
80
-
55 to
+
150
Unit
V
V
W(Ta=25
C)
W(Tc=25
C)
C
C
Collector-base voltage
Collector-emitter voltage
Collector dissipation
Storage temperature
Emitter-base voltage
Collector current
V
EBO
I
C
I
CP
-
7
-
4
V
A(DC)
A(Pulse)
Tj
150
Junction temperature
30
Electrical characteristics (unless otherwise noted, Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
-
80
-
80
-
7
-
-
1000
-
-
-
-
-
-
-
5000
-
1.0
35
12
-
-
-
-
-
100
-
3
-
3
10000
-
1.5
-
V
V
V
V
A
mV
-
MHz
I
C
= -
50
A
I
C
= -
1mA
I
E
= -
5mA
V
CB
= -
80V
V
EB
= -
5V
V
CE
= -
3V, I
C
= -
2A
I
C
/I
B
= -
2A/
-
4mA
V
CE
= -
5V, I
E
=
0.5A, f
=
10MHz
V
CB
= -
10V, I
E
=
0A, f
=
1MHz
Cob
Collector
-
base
breakdown voltage
Collector
-
emitter
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector
-
emitter
saturation voltage
Collector
-
emitter
breakdown voltage
Transition frequency
1 Measured using pulse current.
2 Transition frequency of the device.
Output capacitance
1
1
1
2
pF
2SB1568
Transistors
Rev.A
2/3
Packaging specifications
500
Type
Packaging
Code
Bulk
Basic ordering unit(pieces)
2SB1568
h
FE
1000 to 10000
Electrical characteristics
COLLECTOR CURRENT : I
C
(A)
V
CE
=
-
3V
Ta=100
C
25
C
-
25
C
-
0.01
-
0.1
-
1
-
10
-
0.8
-
1.0
-
1.2
-
1.4
-
1.6
-
1.8
-
2.0
Fig.1 Grounded emitter propagation
characteristics
BASE TO EMITTER VOLTAGE : V
BE
(V)
-
0.6
-
2.2
0
0
-1
-1
-2
-2
-3
-3
-4
-4
-5
-5
Fig.2 Grounded emitter output
characteristics (
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Tc=25
C
-
0.7mA
-
0.6mA
-
0.5mA
-
0.4mA
-
0.3mA
-
0.2mA
I
B
=0A
-
0.8mA
-
0.9mA
-
1mA
Fig.3 Grounded emitter output
characteristics (
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CUNRRENT : I
C
(A)
-
3
-
4
-
5
-
2
-
1
0
0
-
4
-
8
-
12
-
16
-
20
Tc=25
C
Pc=30W
-
1mA
-
0.9mA
-
0.8mA
I
B
=0A
-
0.2mA
-
0.3mA
-
0.6mA
-
0.7mA
-
0.4mA
-
0.5mA
Fig.4 Safe operating area
COLLECTOR TO EMITTER VOLTAGE : T
CE
(V)
COLLECTOR CURRENT : I
C
(A)
-
0.1
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
0.01
-
0.02
-
0.05
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
Tc=25
C
Single
nonrepetitive
pulse
DC
100ms
Pw=10ms
Ic Max. (Pulse
)
Fig.5 Transient thermal resistance
TIME : t (s)
TRANSIENT THERMAL RESISTANCE : R
th
(
C/W)
1
0.001
0.01
0.1
0.1
1
10
10
100
100
1000
1000
10000
Unmounted
Infinite heat sink
Fig.6 DC current gain vs.
collector current (
)
CULLECTOR CURRENT : Ic (A)
DC CURRENT GAIN : h
FE
10
20
50
100
200
500
1000
2000
5000
10000
-
0.01
-
0.02
-
0.05
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
Ta=25
C
V
CE
=
-
5V
-
3V
2SB1568
Transistors
Rev.A
3/3
Fig.7 DC current gain vs.
collector current (
)
CULLECTOR CURRENT : Ic (A)
DC CURRENT GAIN : h
FE
10
20
50
100
200
500
1000
2000
5000
10000
-
0.01
-
0.02
-
0.05
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
0.01
Ta=100
C
25
C
-
25
C
V
CE
=
-
3V
Fig.8 Collector
-
Emitter saturation
voltage vs. collector current (
)
CULLECTOR CURRENT : Ic (A)
DC CURRENT GAIN : h
FE
-
0.1
-
0.2
-
0.5
-
2
-
1
-
5
-
10
-
20
-
50
-
100
-
0.02
-
0.05
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
0.01
Ta=25
C
I
C
/I
B
=1000
500
Fig.9 Collector
-
Emitter saturation
voltage vs. collector current (
)
CULLECTOR CURRENT : Ic (A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
-
0.1
-
0.2
-
0.5
-
2
-
1
-
5
-
10
-
20
-
50
-
100
-
0.02
-
0.05
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
0.01
I
C
/ I
B
=500
Ta=
-
25
C
25
C
100
C
Fig.10 Collector output capacitance
vs. collector-base voltage
COLLECTOR TO BASE VOLTAGE : Vc
E
(V)
COLLECTOR OUTPUT CAPACITANCE : C
0b
(pF)
1000
100
10
1
-
0.1
-
1
-
10
-
100
Ta=25
C
f=1MHz
I
E
=0A
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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